Field-effect transistor and method of making the same

摘要

A semiconductor component includes a substrate ( 110 ) having a surface, a channel region ( 120, 220 ) located in the substrate, a non-electrically conductive region ( 130 ) substantially located below a substantially planar plane defined by the surface of the substrate, a drift region ( 140, 240 ) located in the substrate and between the channel region and the non-electrically conductive region, and an electrically floating region ( 150, 350, 450, 550 ) located in the substrate and contiguous with the non-electrically conductive region.