NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A non-volatile memory device and a method for fabricating the same are provided to prevent the generation of a channel from a lower portion of an isolation layer by using a dummy pattern for dropping a high voltage applied to a selection gate electrode. CONSTITUTION: A plurality of active regions(204) are defined by forming an isolation layer(202) on a predetermined region of a semiconductor substrate(200). A tunnel oxide layer(210) and a gate insulating layer(208) are formed on each predetermined regions of the active regions(204). A floating gate(212a) and a gate interlayer dielectric pattern are formed on the active regions(204). A dummy pattern(212b) and an insulating layer pattern(214b) are formed on the isolation layer. The second conductive layer is formed on the resultant. A control gate electrode(218) and a selection gate electrode(220) are formed by patterning the second conductive layer. The floating gate(212a) is formed on the tunnel oxide layer(210). The control gate electrode(218) is formed on the floating gate(212a). The selection gate electrode(220) is formed on the dummy pattern(212b).