GATE STRUCTURE AND METHOD FOR FORMING THE SAME

摘要

PURPOSE: A gate structure and a method for forming the same are provided to prevent the permeation of impurities into a semiconductor substrate under a gate pattern by covering the third insulating layer pattern on the first insulating layer pattern on a sidewall of a gate pattern. CONSTITUTION: A gate pattern including a gate oxide layer pattern(110), a gate conductive layer pattern(120), and a recessed polishing stop layer(131) is formed on a semiconductor substrate(100). The first insulating layer pattern(141) is arranged on a sidewall of the gate pattern. The first insulating layer pattern(141) is lower than the recessed polishing stop layer(131). The first insulating layer pattern(141) has a horizontal projection portion for covering the semiconductor substrate(100). A recessed gate spacer(152) is formed on the horizontal projection portion of the first insulating layer pattern(141). The recessed gate spacer(152) is higher than the first insulating layer pattern(141). A gap region is formed between the recessed gate spacer(152) and the recessed polishing stop layer(131). The third insulating layer pattern(161) is formed on a sidewall of the recessed gate spacer(152). An interlayer dielectric(171) is formed between the third insulating layer patterns(161). The third insulating layer pattern(162) is inserted between the recessed gate spacer(152) and the recessed polishing stop layer(131).