METHOD FOR MANUFACTURING INFRARED BOLOMETER

摘要

PURPOSE: A method for manufacturing an infrared bolometer is provided to improve reliability of a lower conductive line in an absorption level by selectively etching a sacrificial layer using an anisotropic etching to form an opening part. CONSTITUTION: The first sacrificial layer made of polymer and a mask layer made of polysilicon are sequentially formed on a driving substrate having a connection terminal(112a). The portion of the first sacrificial layer is exposed by selectively etching the mask layer using an isotropic etching. An opening part is formed to expose the portion of the connection terminal(112a) by selectively etching the exposed first sacrificial layer using an anisotropic etching. A lower supporting pier(122) is formed at inner walls of the opening part. A lower conductive line(124) is formed to connect the exposed connection terminal(112a). A supporting level(120) is formed by forming a passivation layer(126) on the lower conductive line to expose the first sacrificial layer. An absorption level(140) including an upper conductive line(144) to connect the lower conductive line(124) is formed on the resultant structure by depositing the second sacrificial layer and selectively etching the second sacrificial layer. The first and second sacrificial layer are then removed.