| 摘要 |
PURPOSE: A dry etch apparatus is provided to prevent an etching error due to a protective layer of an electrode by injecting a reaction gas from the outside of an electrode. CONSTITUTION: A gas injection hole(112) is formed on an upper face of a chamber(110) in order to receive a reaction gas. A gas exhaust hole(111) is formed on a bottom face of the chamber(110) in order to exhaust an internal gas of the chamber(110). A lower electrode(121) and an upper electrode(131) are formed in the inside of the chamber(110). The upper electrode(131) is connected with the ground. A shield(133) is formed around the upper electrode(131). A plurality of nozzles(132) are formed between the upper electrode(131) and the shield(133). A substrate(122) is loaded on the lower electrode(121). A shield(123) is formed around the lower electrode(121). A nozzle(132) is directed to an upper face of the substrate(122).
|
