发明名称 |
METHOD FOR FABRICATING (100) DIRECTIONAL GAAS BEAM WITH RECTANGULAR CROSS-SECTION |
摘要 |
PURPOSE: A method for fabricating a (100) directional GaAs beam having a rectangular cross-section is provided to obtain a floated (100) directional GaAs beam by using a (001) GaAs substrate as a structural material. CONSTITUTION: An etch mask having a (100) directional boundary is patterned by using a (001) GaAs substrate. A stepped structure is formed perpendicularly to a wall face of a structure by wet etching or dry etching. The amount of undercut corresponds to the amount of etch to the direction of depth if the wet etching is done. A wall protection layer of the fabricated structure is formed. A (100) directional beam is floated by the wet etching of the structure having the wall protection layer.
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申请公布号 |
KR20030017003(A) |
申请公布日期 |
2003.03.03 |
申请号 |
KR20010051103 |
申请日期 |
2001.08.23 |
申请人 |
CHO, DONG IL |
发明人 |
BAEK, SEUNG JUN;CHO, DONG IL;KIM, JONG PAL;KIM, SE TAE;KOO, CHI WAN;LEE, SEUNG GI;PARK, SANG JUN |
分类号 |
H01L21/308;(IPC1-7):H01L21/308 |
主分类号 |
H01L21/308 |
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地址 |
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