发明名称 METHOD FOR FABRICATING (100) DIRECTIONAL GAAS BEAM WITH RECTANGULAR CROSS-SECTION
摘要 PURPOSE: A method for fabricating a (100) directional GaAs beam having a rectangular cross-section is provided to obtain a floated (100) directional GaAs beam by using a (001) GaAs substrate as a structural material. CONSTITUTION: An etch mask having a (100) directional boundary is patterned by using a (001) GaAs substrate. A stepped structure is formed perpendicularly to a wall face of a structure by wet etching or dry etching. The amount of undercut corresponds to the amount of etch to the direction of depth if the wet etching is done. A wall protection layer of the fabricated structure is formed. A (100) directional beam is floated by the wet etching of the structure having the wall protection layer.
申请公布号 KR20030017003(A) 申请公布日期 2003.03.03
申请号 KR20010051103 申请日期 2001.08.23
申请人 CHO, DONG IL 发明人 BAEK, SEUNG JUN;CHO, DONG IL;KIM, JONG PAL;KIM, SE TAE;KOO, CHI WAN;LEE, SEUNG GI;PARK, SANG JUN
分类号 H01L21/308;(IPC1-7):H01L21/308 主分类号 H01L21/308
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