METHOD FOR FORMING REFRACTORY METAL-SILICON-NITROGEN CAPACITORS AND STRUCTURE FORMED

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a capacitor at a source position inside a semiconductor structure. SOLUTION: In the method, a pre-processed semiconductor substrate is first positioned in a sputtering chamber. Ar gas is then flown into the sputtering chamber to deposit by sputtering a first refractory metal-silicon-nitrogen layer 14 on the substrate from a refractory metal silicide target, or from two targets of a refractory metal and a silicon. N2 gas is then flown into the sputtering chamber until that the concentration of N2 gas in the camber is at least 35% to deposit by sputtering a second refractory metal-silicon-nitrogen layer 16 on top of the first refractory metal-silicon-nitrogen layer. The N2 gas flow is then stopped to deposit by sputtering a third refractory metal-silicon-nitrogen layer 18 on top of the second refractory metal-silicon-nitrogen layer. The multi- layer stack of the refractory metal-silicon-nitrogen is then photolithographically formed into the capacitor.