| 摘要 |
PROBLEM TO BE SOLVED: To improve the high-output characteristic of a 0.7-1.2μm semiconductor laser element formed on a GaAs substrate, by suppressing the resistance of the element. SOLUTION: The semiconductor laser element is constituted, by successively forming an n-type Alz1 Ga1-z1 As lower clad layer 3, n-type Alw Ga1-w As layer 4, n- or i-type Inx Ga1-x Asy P1-y lower optical waveguide layer 5 lattice-matched with GaAs, active layer 6, p- or i-type Inx Ga1-x Asy P1-y upper optical guide layer 7 lattice-matched with GaAs, p-type Alw Ga1-w As layer 8, p-type Alz1 Ga1-z1 As upper clad layer 9, p-type GaAs contact layer 11, and SiO2 film having a stripe-like current injection opening on an n-type GaAs substrate 1 and providing a p-side electrode 13 on the contact layer 11 and an n-side electrode 14 on the rear surface of the substrate 1. The Alw Ga1-w As layers 4 and 8 have band gaps E, which are smaller than those Ec of the clad layers 3 and 9 and larger than those Ew of the optical waveguide layers 5 and 7 (Ew<E<Ec) and have the same refractive index N as those Nw of the optical waveguide layers 5 and 7 (N=Nw).
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