| 摘要 |
PROBLEM TO BE SOLVED: To prevent a heat history of the manufacture process of a memory circuit from affecting a well region of a logic circuit, and to prevent introduction of contaminants to a substrate at the time of ion implantation for well region formation in a semiconductor device for which the memory circuit and the logic circuit are consolidated. SOLUTION: A protective insulating film 13 is formed on a semiconductor substrate 11 and a first resist pattern 51 opening the memory circuit 1A of the semiconductor substrate 11 is formed on the formed protective insulating film 13. Thereafter, with the first resist pattern 51 as a mask, by implanting boron ions through the protective insulating film 13 to the semiconductor substrate 11, a first P well 14 is formed. Then, after removing the protective insulating film 13, a first insulating film 15, a first conductor film 16 composed of polysilicon, and a lower capacity insulating film 17 which is an ONO film, are successively deposited on the semiconductor substrate 11.
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