发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent the exposure of an interconnection layer in the periphery of a semiconductor. SOLUTION: A method of manufacturing a semiconductor device which is such that a plurality of semiconductor chips having a multilayer interconnection structure are disposed on a substrate comprises a process of lowering the surface of a peripheral part of the substrate where no semiconductor chip is disposed, a process of forming a multilayer interconnection which has a lower surface in the peripheral part of the substrate by repeatedly forming insulation films and interconnection layers on the entire surface of the substrate including the peripheral part which is lower than the other parts, and a process of chemical mechanical polishing of the insulation film which is the upper-most layer of the multilayer interconnection.
申请公布号 JP2003059927(A) 申请公布日期 2003.02.28
申请号 JP20010244339 申请日期 2001.08.10
申请人 SHARP CORP 发明人 HARAZONO TOYOHIRO
分类号 H01L21/3205;H01L21/304;(IPC1-7):H01L21/320 主分类号 H01L21/3205
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