| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device facilitating processes and a manufacturing method of the semiconductor device. SOLUTION: The manufacturing method of the semiconductor device provided with n-type and p-type gate electrodes is provided with a process of forming a first insulating film 12 on a semiconductor substrate 11; a process of forming a first electrode material to which impurities are not introduced on the first insulating film 12; a process of forming an element isolation region composed of an insulating film 15 for element isolation inside the first electrode material, the first insulating film 12, and the semiconductor substrate 11; a process of forming n-type first and second conductive layers 13b and 16b, and forming p-type first and second conductive layers 13c and 16c by performing ion implantation and heat treatment to the first electrode material; and a process of forming an n-type second electrode material on the second conductive layers 16b and 16c, and forming n-type third conductive layers 21b and 21c composed of the second conductive material.
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