| 摘要 |
PROBLEM TO BE SOLVED: To solve the problems of manufacture process increase, a long manufacture work term and a manufacture cost increase, etc. due to wiring layers increase as it is required to wire second metal wiring a2 and b2 to a layer different from first metal wiring a1 and b1, etc., though the integration of an SRAM can be improved. SOLUTION: A P well region is divided, NMOS transistors N1 and N3 are formed in a first P well region, and NMOS transistors N2 and N4 are formed in a second P well region. Or, an N well region is divided, a PMOS transistor P1 is formed in a first N well region, and a PMOS transistor P2 is formed in a second N well region. |
