LITHOGRAPHY SYSTEM, DEVICE MANUFACTURING METHOD, DEVICE MANUFACTURED BY THE METHOD, REFLECTOR MANUFACTURING METHOD, REFLECTOR MANUFACTURED BY THE METHOD AND PHASE SHIFT MASK

摘要

PROBLEM TO BE SOLVED: To provide a reflector which has proper reflectance and can be used, together with EUV radiation by reducing configuration errors. SOLUTION: A reflector for EUV compensates for the configuration errors in a base multilayer or a substrate provided with the multilayer, by providing an additional multilayer selectively to a surface of a basic multilayer. A reflection mask for EUV has two multilayers. One layer causes changes in the relative phase shift and/or reflectivity with respect to the other layer to be made.