SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To improve bonding between a pellet where a semiconductor device is formed and the leads in strength. SOLUTION: An Ni film is formed on the rear of a semiconductor substrate 1, and an Au film is formed on the surface of the Ni film. Then, the semiconductor substrate 1 is subjected to a thermal treatment, by which the Ni film is made to react on Si contained in the semiconductor substrate 1 so as to form an Ni silicide layer 4, and an eutectic layer 5 composed of the Au film and Si contained in the semiconductor substrate 1 is formed. The semiconductor substrate 1 subjected to a thermal treatment is divided by dicing into pellets each equipped with a unit diode device, then the pellet is mounted on the leads, and the eutectic layer 5 is melted by a thermal treatment to bond the pellet to the leads.