| 摘要 |
PROBLEM TO BE SOLVED: To obtain an insulating layer having high dielectric breakdown voltage and large step coverage for a magnetic reading head. SOLUTION: The structure and the method for manufacturing a magnetic reading head include a process of forming a fill layer for a magnetic reading head gap by using an atomic layer deposition(ALD) method. The fill layer contains an insulating material, preferably aluminum oxide, aluminum nitride, their mixture or layered structure. Alternatively, a material having a thermal conductivity higher than aluminum oxide (such as beryllium oxide and boron nitride) may be used in a layer in the aluminum oxide structure. The thickness of the head gap fill layer formed by the ALD method is in the range from about 5 nm to 100 nm, more preferably from about 10 nm to 40 nm. |
