| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an IC chip, by which a semiconductor wafer can be protected from breakage, etc., the handling performance of the semiconductor wafer can be improved, and the semiconductor wafer can be machined into IC chips satisfactorily, even if the thickness of the semiconductor wafer to be machined is about 50μm. SOLUTION: This method of manufacturing an IC chip is such that, at least in the grinding process or a dicing process, a semiconductor wafer is machined, while a reinforced semiconductor wafer thin film is stuck to a grinding tape of a dicing tape. The reinforced semiconductor wafer thin film is reinforced by a support layer, made of thermosoftening resin whose storage elasticity E' (Pa), measured by a viscoelasticity measuring instrument under the conditions of the frequency being 10 Hz and a distortion is 0.1%, is changed with the changing rate of not less than 5 Pa/ deg.C at a firt-order phase transition temperature. |
