发明名称 ETCHING METHOD, METHOD OF MANUFACTURING CAPACITOR, AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an etching method which simplifies its steps. SOLUTION: An Ru film 3, a PZT film 4 and an Ru film 5 are first formed sequentially on a substrate 2. An SiO2 film 6 is then formed on the Ru film 5. Subsequently, a resist mask 7 is formed on the SiO2 film 6. And the SiO2 film 6 is etched with use of the resist mask 7 to form a hard mask 8. Thereafter, the substrate 2 is mounted at a predetermined place in an etching chamber and kept at a temperature of, e.g. 310 deg.C. The Ru film 5 is etched with use of the hard mask 8 to form an Ru electrode 9. Thereafter, the PZT film 4 is etched with use of the hard mask 8, the Ru electrode 9 and BCl3 and Ar gases. And the Ru film 3 is etched to form an Ru electrode 11.
申请公布号 JP2003059905(A) 申请公布日期 2003.02.28
申请号 JP20010232521 申请日期 2001.07.31
申请人 APPLIED MATERIALS INC 发明人 YAMAUCHI HIDEAKI;TSUTSUMI KOJI;KAWASE YOHEI
分类号 H01L21/302;H01L21/02;H01L21/3065;H01L21/311;H01L21/3213;H01L21/8246;H01L27/105;(IPC1-7):H01L21/306 主分类号 H01L21/302
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