| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming an insulator film which enables to improve the productivity by simplifying a process, while preventing the decline in productivity even when forming a thick insulator film. SOLUTION: On a wafer W which is formed with a lower electrode layer 200 and a barrier layer 201, a metal oxide film 202 constituted of a Ta oxide film is formed by MO-CVD. Then, the wafer W is rapidly heated by a lamp at 650 deg.C or below, while supplying the steam onto the wafer W at nearly the atmospheric pressure, to form an oxidized and reformed metal oxide film 204 on the wafer W. In the same chamber, the wafer W is annealed at 700 deg.C or above to form a crystallized metal oxide film 206. Then, an upper electrode layer 207 is formed to obtain a capacitor member with a dielectric layer 20.
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