| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a barrier insulation film which covers an interconnection mainly formed of a copper film and has a small leakage current and has a sufficiently high capability to prevent the diffusion of copper and a low relative permittivity. SOLUTION: The barrier insulation film 34a has a multiplayer structure of two or more layers which comprises a first barrier insulation film 34aa which contains silicon, oxygen, nitrogen, and hydrogen or silicon, oxygen, nitrogen, hydrogen, and carbon, and a second barrier insulation film 34ab which contains silicon, oxygen, and hydrogen or silicon, oxygen, hydrogen, and carbon.
|
