| 摘要 |
PROBLEM TO BE SOLVED: To provide a gate noise suppression circuit wherein switching speed is not lowered and switching loss is not increased. SOLUTION: In the gate noise suppression circuit 4 when an insulated gate semiconductor device 3 is on, n-type MOSFET M1 is in on-state and a capacitor C1 for noise suppression operates. When the insulated gate semiconductor device 3 is off, a p-type MOSFET M2 is in on-state, and a capacitor C2 for noise suppression operates. When the insulated gate semiconductor device 3 is switching between turn-on and turn-off, the MOSFETs M1 and M2 are in off- state, and the capacitors C1 and C2 for noise suppression do not operate. Thus, the switching speed is not lowered and switching loss is not increased.
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