METHOD FOR FABRICATING SEMICONDUCTOR ELEMENT HAVING DOUBLE GATE OXIDE FILM

摘要

PROBLEM TO BE SOLVED: To provide a method for fabricating a semiconductor element having a double gate oxide film. SOLUTION: A gate oxide film and a gate pattern are formed on a semiconductor substrate where CA and PA are delimited. Source and drain regions are then formed in the vicinity of the surface of the semiconductor substrate between the gate patterns. Subsequently, an interlayer insulation film pattern having a contact hole for exposing the semiconductor substrate of the CA while filling the gap between the gate patterns is formed. Thereafter, the semiconductor substrate of the CA thus exposed is oxidized and a gate oxide film of the CA thicker than that of the PA is formed by diffusing oxygen. Since a double gate oxide film can be formed such that the gate oxide film of the PA is not contaminated, operational characteristics and reliability of a semiconductor element can be enhanced.