| 摘要 |
PROBLEM TO BE SOLVED: To form an N well contact region and a P well contact region without the need of a high-grade micronization technique. SOLUTION: The N well contact region 13 is formed integrally with a second diffusion region 12 at the upper part of an N well and a P well, and the P well contact region 14 is formed integrally with a first diffusion region 11 at the upper part of the P well and the N well. |
