MULTISTAGE DISCHARGE PLASMA TREATMENT METHOD AND APPARATUS THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a method and an apparatus for forming a metal oxide thin film or a metal nitride thin film by discharge plasma treatment which enables to form a high-quality metal oxide thin film or metal nitride thin film at such a film formation speed as to satisfy the industrial requirements. SOLUTION: In a multistage discharge plasma treatment method and apparatus for forming a thin film consisting of a metal oxide chemical compound and/or a metal nitride chemical compound by reacting a gas containing metal elements and a gas containing oxygen and/or a gas containing nitrogen, a gas containing metal elements which has passed through one plasma generation chamber is joined by a gas containing oxygen and/or a gas containing nitrogen, and then is passed through another plasma generation chamber to form a thin film.