发明名称 |
THIN FILM PIEZOELECTRIC SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
<p>PROBLEM TO BE SOLVED: To form a thin film piezoelectric material of 5 micrometers or smaller on a silicon substrate or the like. SOLUTION: A thin film piezoelectric substrate with the film thickness of the piezoelectric substrate of 5 micrometer or smaller is provided. A substrate, formed by PZT in thin film excellent in piezoelectric characteristic, can be provided even on the material substrate such as silicon substrate, on which PZT thin film of satisfactory piezoelectric characteristics is hard to be formed by direct sputtering method.</p> |
申请公布号 |
JP2003060248(A) |
申请公布日期 |
2003.02.28 |
申请号 |
JP20010240787 |
申请日期 |
2001.08.08 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
NAKATANI MASAYA;KOMAKI KAZUKI;MORINAKA KATSUYA |
分类号 |
B81B3/00;C23C14/06;H01L41/08;H01L41/18;H01L41/22;H01L41/313;H01L41/316 |
主分类号 |
B81B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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