| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which forms a crystalline semiconductor film, in which orientations are matched by controlling the crystal orientations and which obtains the crystalline semiconductor film, in which the concentration of an impurity is reduced. SOLUTION: The method for manufacturing the semiconductor device comprises the steps of forming a first semiconductor region, made of an amorphous semiconductor on a surface of an insulator, scanning a continuous oscillation laser beam from one end of the first region to the other end, once melting the first region, crystallizing the first region, and thereafter etching the first region, to form an active layer of a TFT to form a second semiconductor region. In order to improve the field effect mobility of the TFT, the scanning direction of a laser beam is made to substantially coincides with a channel length direction in a thin film transistor, in a pattern of the second region formed through etching. |
