| 摘要 |
PROBLEM TO BE SOLVED: To prevent decline of reliability of device characteristics and to improve the degree of freedom of design of a memory cell device. SOLUTION: A semiconductor memory relating to the embodiment is provided with a first gate electrode of a memory transistor 28 arranged with a first interval X on a semiconductor substrate 11, a second gate electrode of peripheral transistors 29 and 30 arranged with a second interval Y on the semiconductor substrate 11, a first diffusion layer 21 formed inside the semiconductor substrate 11 holding the first gate electrode therein, second diffusion layers 24 and 26 formed inside the semiconductor substrate 11 holding the second gate electrode therein, a first insulating film 22a formed on the first diffusion layer, a second insulating film 22b formed on a side face of the second gate electrode, and silicide films 27a, 27b and 27c respectively formed on the first gate electrode, the second gate electrode and the second diffusion layers 24 and 26.
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