| 摘要 |
PROBLEM TO BE SOLVED: To form a semiconductor device having a wiring body with a space. SOLUTION: In the semiconductor device having a wiring body with a space, AlCu wiring 4 having barrier metal (TiN, 3, 5, 6) on an upper surface, a lower surface and a side surface is formed on a P-type silicon substrate 1 via a flattened insulating film (PSG) 2. The space 7 is formed on the side surface and a part of the upper surface of the wiring 4, and the periphery is covered with an interlayer insulating film (SiO2 ) 8. A via formed by selectively opening a part of the flattened interlayer insulating film 8 is arranged in a part of the upper surface of the wiring 4. Barrier metal 9 is arranged on a side wall of the via. A conducting plug (W) 10 composed of a tungsten film of selective chemical vapor growth is formed via the barrier metal 9. An upper layer AlCu wiring 12 having barrier metals (11, 12) in an upper part and a lower part covered with protective films (PSG 14 and SiN 15) is formed on the flattened conducting plug (W) 10.
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