| 摘要 |
PROBLEM TO BE SOLVED: To provide a microdevice which can be processed by preventing occurrence of cracks, bending or the like to improve the dimensional accuracy, when an opening penetrating a silicon substrate if formed in a microdevice having a silicon substrate as a base. SOLUTION: A mask layer 15 is formed on a silicon substrate 10, and an opening G, penetrating the silicon substrate 10, is formed by dry etching using the mask layer 15 as a mask. Here, a film containing a material, including a polling such as Pt having electronegativity of 1.8 or higher, is used as the mask layer 15. |
