| 摘要 |
<p>PROBLEM TO BE SOLVED: To form micronized wiring structure without increasing resistance of a through hole. SOLUTION: A semiconductor device has a first wiring layer formed on the surface of a first interlayer insulating film, and a second wiring layer which is arranged above the first wiring layer and electrically connected with the first wiring layer. The first wiring layer is so constituted that width of a lower part becomes narrow as compared with that of an upper part.</p> |
