| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a production method therefor with which the processes of high productivity can be provided, controllability in gate length line width is improved and an effective gate length is extremely fine. SOLUTION: A gate formation layer (undoped GaAs) having a step 15 is formed on a channel layer (n-type GaAs) 13, the step 15 is positioned between a source electrode 21 and a drain electrode 22, a channel layer 13 and an opposite conductivity type diffusion region (p-type GaAs) 17a are formed on a sidewall 15a of the step 15, and a gate electrode 20 is connected to that diffusion region 17a.
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