| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element that can be increased in maximum rated light output, without causing increase in the resistance of the element. SOLUTION: In this semiconductor laser element, a lower clad layer 2, an active layer 3, and a first upper clad layer 4 are successively laminated upon a substrate 1, in this order. A ridge-shaped second upper clad layer 7 is formed on the first upper clad layer 4 and current-blocking layers 6 are formed on both sides of the clad layer 7. In addition, a contact layer 8 is formed on the second upper clad layer 7 and current-blocking layers 6. A distance L2 between the upper surfaces of the active layer 3 and second clad layer 7 is made shorter than that L1 between the lower surfaces of the active layer 3 and lower clad layer 2. In addition, a width S1 of the lower surface of the second upper clad layer 7 is set to the diffusion length of carriers or narrower. The width D1 of the upper surface of the second clad layer 7 is almost equal to that of the conventional example.
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