| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein parasitic capacitance between metal wirings of a semiconductor device is reduced, and high speed operation of the semiconductor device is realized by arranging a cavity whose relative permittivity is about 1 between the metal wirings. SOLUTION: Copper wiring 22 is formed on a first insulating film (silicon oxide film) 21. A silicon nitride film 23 of several nm in thickness, the cavity 24 of 50 nm in width, a silicon nitride film 23, a silicon oxide film 25 containing carbon, a silicon nitride film 23, a cavity 24, a silicon nitride film 23, and copper wiring 22, are formed in order between the copper wirings 22. A silicon nitride film 23 is formed above the copper wiring 22 and the silicon oxide film containing carbon.
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