| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem, when an impurity-added low-temperature buffer layer composed of a boron phosphide-based semiconductor layer is joined to the upper surface of a conductive single-crystal substrate, particularly, a single- crystal silicon substrate, the crystallinity of the substrate near the junction interface between the buffer layer and substrate deteriorating due to the impurity contained in the buffer layer when the impurity infiltrates into the substrate. SOLUTION: An element having a larger atomic radius than phosphorus has is used as the impurity added to the low-temperature buffer layer 102. When the buffer layer 102 is provided on a silicon substrate 101, particularly, an element having atomic radius larger than that of silicon is used as the impurity. |
