发明名称 COPPER-BASED METAL POLISHING LIQUID AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a copper-based polishing liquid, by which copper or copper alloy is hardly etched in a dipping state and is dissolved in a polishing treatment state with the etching rate which is several tens of times the rate in the dipping state. SOLUTION: This copper-based polishing liquid contains at least one organic acid, such as amino acetic acid, etc., which reacts with copper hydrate to produce complex, oxidizing agent, and water.</p>
申请公布号 JP2003059867(A) 申请公布日期 2003.02.28
申请号 JP20020212954 申请日期 2002.07.22
申请人 TOSHIBA CORP 发明人 HIRABAYASHI HIDEAKI;HIGUCHI KATSUTOSHI
分类号 B24B37/00;C09K3/14;H01L21/304;(IPC1-7):H01L21/304 主分类号 B24B37/00
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