| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a polishing composition which can polish a tungsten film and an insulating film at a substantially same polishing rate; and as a result, create a polishing surface on which no polishing scratches occur with proper flatness, and which is not contaminated with impurities, such as iron ions or the like. SOLUTION: In a polishing composition for polishing a semiconductor device, and a polishing method using the same, the semiconductor device is composed of at least a tungsten film and an insulating film which contain (a) silicon dioxide, (b) periodic acid, and (c) a pH adjuster. This polishing composition is suited to finishing polishing of the semiconductor device.</p> |
