SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To form a capacitor in which capacitance per unit volume is large, voltage dependence is low, and the absolute level is a MOS transistor level only by adding a mask in a process of manufacturing a BicMOS-type semiconductor device. SOLUTION: This method comprises the steps of forming a collector wall 103 in a bipolar transistor collector (C) and, at the same time, forming a conductive region 103 similar to the collector wall in a capacitor (A), forming a nitride film 106 on the collector wall 103 and the conductive region 103 formed in the capacitor (A), forming an oxide film on the whole surface to oxidize a gate, forming a gate electrode 108 in a CMOS unit (B), and, at the same time, forming an upper wiring layer 108 on the capacitor (A).