| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device having an element isolation region coincident with a surface of a semiconductor substrate. SOLUTION: The method for manufacturing a semiconductor device includes a process for forming a trench between a first mask covering an active region of the semiconductor substrate and a second mask having a surface area larger than that of the first mask, a process for depositing insulating material in the trench and on the masks, a process for applying CMP to the insulating material until a surface of the first mask is exposed, a process or newly depositing insulating material on the first mask and the residual insulating material, and a process for applying CMP to the insulating material containing the new insulating material until a surface of the second mask is exposed.
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