| 摘要 |
PROBLEM TO BE SOLVED: To form a source area and a drain area in the manner of self- alignment to a gate electrode at a process temperature, with which an inexpensive glass substrate can be used. SOLUTION: The production method for thin film transistor is provided with a process for making a silicon layer into polycrystalline by irradiating the silicon layer with energy beams and the quality of a polycrystalline silicon layer is improved by applying heat treatment to the polycrystalline silicon. Besides, this production method for thin film transistor is provided with a process for applying the ion injection of an impurity to the gate electrode in the manner of self-alignment. Next, the impurity in the source/drain region is activated by irradiating that region with laser beams, and heat treatment is applied for activating the impurity just under the gate electrode channeled obliquely by the ion injection. By extinguishing fine defects in the polycrystalline silicon formed by a beam anneal, the thin film transistor of satisfactory sub-threshold characteristics can be formed. Further, a self-alignment type thin film transistor can be formed while reducing a leakage current between a source and a drain by activating the impurity under the obliquely channeled gate electrode.
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