| 摘要 |
PROBLEM TO BE SOLVED: To provide a GaN-based semiconductor laser having stable vertical and lateral modes by improving optical confinement. SOLUTION: In this GaN-based semiconductor laser, an n-type Al0.07 Ga0.93 N first clad layer, an active layer, and a p-type Al0.07 Ga0.93 N second clad layer are laminated upon a substrate. In addition, the optical confinement to the active layer is improved, and occurrence of cracks in crystals is suppressed by forming an AlGaN layer having an Al composition, which is higher than (or equal to) that of the first clad layer between the first clad layer and substrate.
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