| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser that can obtain a stable lateral mode in which the flow of current in a ridge is fixed and the current density in a light emitting region is made uniform, and in addition, the luminous intensity distribution little varies; can be mounted without rattling, and is reduced in element resistance. SOLUTION: In the ridge structure of this semiconductor composed of a contact layer, a current-blocking layer, and a third clad layer, the upper end face of the current-blocking layer and the upper end face of the contact layer or third clad layer adjoin each other and form a flat surface.
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