| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, a radiation detecting device and a photo detector in which insulating property of an insulating film is maintained when film thickness is increased. SOLUTION: In the semiconductor device, a first wiring 17 and a second wiring 16 formed on a substrate are mutually insulated and intersected, and an end portion of the first wiring 17 is inclined. Film thickness of the first 17 in a region except the inclined portion is Tg. Film thickness of a layer for insulating the first wiring 17 from the second wiring 16 is Ti. An inclination angle of the first wiring 17 isθg . A dielectric breakdown voltage which causes dielectric breakdown in the intersecting portion is V. The following relation is satisfied; V>C.Ti /Tg .1/cos<2> (90 deg.-θg ) where 75>=C>=65.
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