| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device provided with an embedded impurity layer for an α ray soft error measure and provided with an SRAM capable of reducing taps for grounding for each cell. SOLUTION: An embedded n-type layer B-N is disposed as an intermediate layer on a p-type semiconductor substrate P-sub. On the n-type layer B-N, a p-type well region PWEL is uniformly provided. On the n-type layer B-N, the p-type substrate P-sub is present for prescribed thickness, and the p-type well region PWEL and an n-type well region NWEL are provided in equal depth. A CMOS circuit is constituted of respective wells. A power supply voltage VDD is supplied to the source of a P channel MOS transistor Qp and the well region NWEL. Also, since the well region PWEL is connected to the p-type substrate P-sub, it does not float. Thus, for supply of a ground potential VSS to the well region PWEL, the number of the taps is reduced. |
