| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem of the cost reduction of a semiconductor light- emitting element which is low in power consumption and operating voltage being difficult. SOLUTION: In the semiconductor light emitting element, a composite laminated buffer layer 12, formed by alternately laminating a plurality of Alx Iny Ga1-x-y N first layers 12a and a plurality of Ala Inb Gai-a-b N second layers 12b upon another, is provided on a low-resistance silicon substrate 11. Then an n-type gallium nitride semiconductor layer 12, a gallium - indium nitride active layer 14, and a p-type gallium nitride semiconductor layer 15 are successively formed on the buffer layer 12. In addition, an anode electrode 17 is provided on the semiconductor layer 15, and a cathode electrode 18 is provided on the rear surface of the substrate 11. |
