| 摘要 |
PROBLEM TO BE SOLVED: To constitute a light-emitting layer composed of a quantum well structure, so that the layer emits superior monochromaticity light at constituting of the layer on a barrier layer composed of a boron-containing III-V compound semiconductor. SOLUTION: In a laminated structure provided with an active layer, composed of a III-V compound semiconductor on the barrier layer composed of the boron- containing III-V compound semiconductor, the active layer has a quantum well structure constituted of the barrier layer composed of the boron-containing III-V compound semiconductor, and a well layer composed of a III nitride semiconductor. |
