MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent surface roughness in an insulating film when the insulating film is subjected to wet cleaning after a polymer film is removed by ashing which polymer film is deposited on a resist pattern, when the insulating film is subjected to plasma etching using an etching gas containing carbon and fluorine. SOLUTION: An insulating film 201 is subjected to plasma etching using an etching gas composed of fluorocarbon gas and a resist pattern 202 as a mask. A polymer film 206 deposited on the resist pattern 202 is subjected to ashing of first stage using oxygen gas or a gas containing oxygen as the main ingredient under the conditions of relatively low chamber pressure and plasma production power settings. The residual polymer present on the insulating film 201 is subjected to ashing of second stage using oxygen gas or a gas containing oxygen as the main gradient under the conditions of relatively high chamber pressure and plasma production power setting.