发明名称 APPARATUS AND METHOD FOR TREATMENT OF SUBSTRATE
摘要 <p>PROBLEM TO BE SOLVED: To provide an apparatus and a method for the treatment of a substrate wherein the substrate comprising a notch can be held satisfactorily and the substrate can be treated without damaging the substrate. SOLUTION: In the substrate treatment apparatus, a wafer W is sandwiched by a spin chuck so as to be turned, a treatment liquid is supplied to the wafer W being turned, and the surface of the wafer W is treated. The spin chuck is provided with a holding pin 51 which comes into contact with the end face of the wafer W so as to sandwich the wafer W. The wafer contact face 51a of the holding pin 51 comprises a radius of curvature R determined so as not to come into contact with the inner wall of the notch N formed on the end face of the wafer W as viewed from a plane, and it is formed in a convex curved surface toward the rotation center of the spin chuck. Consequently, the wafer contact face 51a does not enter the notch N.</p>
申请公布号 JP2003060013(A) 申请公布日期 2003.02.28
申请号 JP20010245650 申请日期 2001.08.13
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 FUJII KENJI;ASA SEKIBUN;FURUMURA TOMOYUKI;HAYAMA RYUICHI
分类号 B05D1/40;B05C11/08;H01L21/027;H01L21/68;H01L21/683;(IPC1-7):H01L21/68 主分类号 B05D1/40
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