METHOD FOR CORRECTING MASK DATA, DEVICE THEREFOR AND METHOD FOR MANUFACTURING PHOTOMASK

摘要

PROBLEM TO BE SOLVED: To reduce the labor and time from measurement of the length of a pattern to verification in process proximity effect correction (PPC). SOLUTION: The pattern data is extracted (ST6) from the designed data of the original mask pattern designed by the optical proximity effect correction. The coordinate information of the extracted pattern and the profile edge information are used to calculate the designed line width of the pattern (ST81), while a real pattern corresponding to the pattern in a sample produced by using the original mask pattern is identified according to the coordinate information of the extracted pattern and the length of the identified real pattern is measured to obtain the measured value of the line width (ST82). The differenceΔW between the designed value and the measured value is calculated (ST10) so as to change the correction amount for the designed data according to the difference.