发明名称 METHOD FOR MANUFACTURING FERROELECTRIC THIN FILM AND METHOD FOR MANUFACTURING FERROELECTRIC MEMORY USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a uniform ferroelectric thin film having good crystallinity. SOLUTION: A method for manufacturing a ferroelectric thin film comprises the steps of forming a seed layer containing an ultra-fine particle powder which contains a constituting element of the ferroelectric thin film, on the surface of a substrate for constituting a substrate prior to a formation of the ferroelectric thin film, forming the ferroelectric thin film on an upper surface of the seed layer, and crystallizing the thin film with the seed layer as a nucleus.
申请公布号 JP2003060168(A) 申请公布日期 2003.02.28
申请号 JP20010246070 申请日期 2001.08.14
申请人 ROHM CO LTD 发明人 FUJIMORI TAKAKAZU
分类号 C23C14/58;H01L21/02;H01L21/28;H01L21/314;H01L21/316;H01L21/8246;H01L21/8247;H01L27/105;H01L27/115;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):H01L27/105;H01L21/824 主分类号 C23C14/58
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