| 摘要 |
PROBLEM TO BE SOLVED: To provide an insulated gate field effect transistor using SiC, which is restrained from being reduced in mobility due to the influence of a gate insulating film/SiC interface and reduced in ON-state resistance. SOLUTION: An insulated gate field effect transistor is equipped with a P-type SiC substrate 11, a semiconductor region composed of an N-type SiC layer 12 which is provided in contact with the SiC substrate 11 to serve as an embedded channel and a P-type SiC layer 13 provided in contact with the SiC layer 12, a gate electrode 21 provided on the SiC layer 13 through the intermediary of a gate insulating film 17, and N-type source/drain regions 15 and 16 formed on the surface of the SiC substrate 11 so as to sandwich the gate electrode 21 between them. A current flowing between the source/drain regions 15 and 16 is controlled by controlling the carrier concentration of the SiC layer 12 with the potentials of the SiC substrate 11 and the gate electrode 21.
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