| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which wiring capacitance is reduced, and a manufacturing method for a semiconductor device in which the number of manufacturing processes is small. SOLUTION: The semiconductor device has a semiconductor substrate 1, a first interlayer insulating film 2 formed in the substrate, a first wiring layer 3 formed in the interlayer insulating film, a first insulating layer 4 covering the first wiring layer and the interlayer insulating film, a second layer insulating film 6 covering the first insulating layer, an organic photosensitive film 7 covering the second interlayer insulating film, a second wiring layer 8 formed on the photosensitive film, a third interlayer insulating film 9 formed on a second wiring layer side surface and the photosensitive film, a conductive via 5 which penetrates the first insulating layer, the second interlayer insulating film and the photosensitive film and connects the first wiring layer with the second wiring layer, and a second insulating film 10 formed on the third interlayer insulating film and the second wiring layer.
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